Electronic, magnetic & optical materials · Semiconductors

Gallium arsenide semiconductor

A III–V semiconductor with high electron mobility and direct band gap, used in radio-frequency electronics, optoelectronics and high-efficiency solar cells.

Family
Compound Semiconductor
Record
Standard
Conditions
1
Sources
3
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01

Overview

Material class
Electronic, magnetic & optical materials
Category
Semiconductors
Family
Compound Semiconductor
Product forms
Not specified

Composition

ConstituentMinMaxTypicalNote
Ga48.2stoichiometric mass %
As51.8stoichiometric mass %

02

Properties and conditions

Engineering properties

PropertyValueUnitCondition
Density5.32g/cm³Representative; verify product form and condition
Band gap1.42eV300 K
Electron mobility~8500cm²/V·s300 K, high purity
Thermal conductivity~46–55W/m·KRepresentative; verify product form and condition
Melting point~1238°CRepresentative; verify product form and condition
Wafer formsemi-insulating / dopedapplication dependent

Conditions

reference

Reference material state

Purity, orientation, doping and processing state must be stated.

03

Processing and use

Processing

  • Semi-insulating substrates and epitaxial defect density govern device performance.
  • Arsenic handling requires closed, controlled semiconductor processes.

Applications

  • RF power amplifiers
  • Laser diodes
  • Infrared LEDs
  • Multijunction solar cells

Selection considerations

  • More expensive and brittle than silicon but superior for selected RF/optoelectronic functions.
  • Thermal management remains important in power devices.

04

Standards and related materials

Standards and designations

SystemDesignationNote
SEMIGaAs wafer specificationssupplier/grade dependent

05

Sources and context

Sources

Confirm the applicable specification, product form and condition before using values for design or procurement.

Supply and sustainability

Gallium is mostly a by-product of bauxite/zinc processing; wafer capacity is specialized and geographically concentrated.

High-value wafer reclaim and fab scrap recovery are practical; gallium recovery from dispersed devices is difficult.

Strategic context

Enables high-frequency communications, radar, laser diodes and space photovoltaic systems.

Critical inputs: Gallium, Arsenic

Basis: EU Critical Raw Materials Act (2024); USGS 2025 Critical Minerals List; US DOE Critical Materials Assessment (2023)